A CMOS RF Power Detector Using an Improved Unbalanced Source Coupled Pair
نویسندگان
چکیده
This paper presents the design of a CMOS RF Power Detector (PD) using 0.18 μm standard CMOS technology. The PD is an improved unbalanced source coupled pair incorporating an output differential amplifier and sink current steering. It realizes an input detectable power range of −30 to −20 dBm over 0.1–1 GHz. Also it shows a maximum data rate of 30 Mbps with 2 pF output loading under OOK modulation. The overall current consumption is 1.9 mA under a 1.5 V supply. key words: CMOS RF power detector, unbalanced source coupled pair, output differential amplifier, sink current steering
منابع مشابه
Improving the performance of UPQC under unbalanced and distortional load conditions: A new control method
This paper presents a new control method for a three-phase four-wire Unified Power Quality Conditioner (UPQC) to deal with the problems of power quality under distortional and unbalanced load conditions. The proposed control approach is the combination of instantaneous power theory and Synchronous Reference Frame (SRF) theory which is optimized by using a self-tuning filter (STF) and without us...
متن کاملA CMOS RF RMS Detector for
This project involves the design of a CMOS RF RMS Detector that converts the RMS voltage amplitude of an RF signal to a DC voltage. Its high input impedance and small area make it suitable for the built-in-testing of critical RF blocks of a transceiver such as a Low Noise Amplifier (LNA) and Power amplifier (PA) without affecting their performance and with minimum area overhead. DESCRIPTION: Th...
متن کاملDesign and Fabrication of on Chip Microwave Pulse Power Detectors
Title of Dissertation: DESIGN AND FABRICATION OF ON CHIP MICROWAVE PULSE POWER DETECTORS Woochul Jeon, Doctor of Philosophy, 2005 Directed By: Professor John Melngailis Department of Electrical and Computer Engineering On-chip microwave pulse-power detectors are promising devices for many electrical systems of both military and commercial applications. Most research in microwave power detector ...
متن کاملA 39 dB DR CMOS Log-Amp RF Power Detector with ± 1.1 dB Temperature Drift from -40 to 85°C
This paper presents a temperature compensated logarithmic amplifier (log-amp) RF power detector implemented in CMOS 0.18μm technology. The input power can range from -50 to +10 dBm for RF signals ranging from 100 MHz to 1.5 GHz. This design attains a typical DR of 39 dB for a ±1 dB logconformance error (LCE). Up to 900 MHz the temperature drift is never larger than ±1.1 dB for all 24 measured s...
متن کاملAnalysis and Design of High Gain, and Low Power CMOS Distributed Amplifier Utilizing a Novel Gain-cell Based on Combining Inductively Peaking and Regulated Cascode Concepts
In this study an ultra-broad band, low-power, and high-gain CMOS Distributed Amplifier (CMOS-DA) utilizing a new gain-cell based on the inductively peaking cascaded structure is presented. It is created bycascading of inductively coupled common-source (CS) stage and Regulated Cascode Configuration (RGC).The proposed three-stage DA is simulated in 0.13 μm CMOS process. It achieves flat and high ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- IEICE Transactions
دوره 91-C شماره
صفحات -
تاریخ انتشار 2008